This resulted within a reduced work perform as well as the formation of the Schottky Speak to amongst the BrGO and n-form Si substrate. On account of the upper proportion of B-C and B-C3 bonding during the BrGO/Si device than that during the rGO/Si, the diminished Schottky barrier height in https://www.directivepublications.org/journal-of-applied-nanoscience/